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US Patent Issued to SAMSUNG ELECTRONICS on July 14 for "Layer structures including configuration increasing operation characteristics, methods of manufacturing the same, electronic devices including layer structures, and electronic apparatuses including electronic devices" (South Korean Inventors)

ALEXANDRIA, Va., July 14 -- United States Patent no. 12,684,823, issued on July 14, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-do, South Korea). "Layer structures including configuration ... Read More


US Patent Issued to Intel on July 14 for "Integrated circuits with self-aligned tub architecture" (Oregon Inventors)

ALEXANDRIA, Va., July 14 -- United States Patent no. 12,684,824, issued on July 14, was assigned to Intel Corp. (Santa Clara, Calif.). "Integrated circuits with self-aligned tub architecture" was inv... Read More


US Patent Issued to Huawei Technologies'Co., 'Ltd.' on July 14 for "Terminal structure of power device and manufacturing method thereof, and power device" (Chinese Inventors)

ALEXANDRIA, Va., July 14 -- United States Patent no. 12,684,825, issued on July 14, was assigned to Huawei Technologies'Co.'Ltd.' (Shenzhen, China). "Terminal structure of power device and manufactur... Read More


US Patent Issued to Taiwan Semiconductor Manufacturing on July 14 for "Avalanche-protected transistors using a bottom breakdown current path and methods of forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., July 14 -- United States Patent no. 12,684,826, issued on July 14, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Avalanche-protected transistors usi... Read More


US Patent Issued to VANGUARD INTERNATIONAL SEMICONDUCTOR on July 14 for "Semiconductor device and method for forming the same with doping regions having different conductivity types" (Taiwanese Inventors)

ALEXANDRIA, Va., July 14 -- United States Patent no. 12,684,827, issued on July 14, was assigned to VANGUARD INTERNATIONAL SEMICONDUCTOR Corp. (Hsinchu, Taiwan). "Semiconductor device and method for ... Read More


US Patent Issued to Diodes on July 14 for "Power MOSFET with gate-source ESD diode structure" (Taiwanese Inventors)

ALEXANDRIA, Va., July 14 -- United States Patent no. 12,684,828, issued on July 14, was assigned to Diodes Inc. (Plano, Texas). "Power MOSFET with gate-source ESD diode structure" was invented by Wan... Read More


US Patent Issued to DENSO, TOYOTA JIDOSHA, MIRISE Technologies on July 14 for "Field effect transistor" (Japanese Inventor)

ALEXANDRIA, Va., July 14 -- United States Patent no. 12,684,829, issued on July 14, was assigned to DENSO Corp. (Kariya-city, Japan), TOYOTA JIDOSHA K.K. (Toyota, Japan) and MIRISE Technologies Corp. ... Read More


US Patent Issued to Fujian Jinhua Integrated Circuit on July 14 for "Semiconductor structure, method of forming the semiconductor structure, and semiconductor device" (Chinese Inventors)

ALEXANDRIA, Va., July 14 -- United States Patent no. 12,684,830, issued on July 14, was assigned to Fujian Jinhua Integrated Circuit Co. Ltd. (Quanzhou City, China). "Semiconductor structure, method ... Read More


US Patent Issued to UNITED MICROELECTRONICS on July 14 for "Semiconductor device having a gate on a fin-shaped structure and multi-layer single diffusion break (SDB) features" (Taiwanese Inventors)

ALEXANDRIA, Va., July 14 -- United States Patent no. 12,684,831, issued on July 14, was assigned to UNITED MICROELECTRONICS CORP. (Hsin-Chu City, Taiwan). "Semiconductor device having a gate on a fin... Read More


US Patent Issued to Intel on July 14 for "Epi barrier aligned backside contact" (Oregon Inventors)

ALEXANDRIA, Va., July 14 -- United States Patent no. 12,684,832, issued on July 14, was assigned to Intel Corp. (Santa Clara, Calif.). "Epi barrier aligned backside contact" was invented by Leonard P... Read More